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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJW21192 DESCRIPTION *With TO-247 package *Complement to type MJW21191 *Wild area of safe operation APPLICATIONS *Designed for power audio output, high power drivers in audio amplifiers PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector MAX 150 150 5 8 16 2 100 -65~150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 0.65 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN MJW21192 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ;IB=0 150 V VCE(sat)-1 VCE(sat)-2 VBE(ON) Collector-emitter saturation voltage IC=4A; IB=0.4A 1.0 V Collector-emitter saturation voltage IC=8A; IB=1.6A 2.0 V Base-emitter on voltage IC=4A ; VCE=2V 2.0 V ICES Collector cut-off current VCB=150V; IE=0 10 A IEBO Emitter cut-off current VEB=5V; IC=0 10 A hFE-1 DC current gain IC=4A ; VCE=2V 15 100 hFE-2 DC current gain IC=8A ; VCE=2V 5 fT Transition frequency IC=1.0A ; VCE=10V,f=1MHz 4.0 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJW21192 Fig.2 Outline dimensions 3 |
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